Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing
نویسندگان
چکیده
منابع مشابه
Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing
In this paper, we reported the effective mobility and the interface-state density of La2O3 nMISFETs fabricated under different post deposition annealing (PDA) conditions; annealing temperature (300 ◦C – 600 ◦C) and ambient (N2 or O2). High effective mobility of 312 cm2/Vs and low interface-state density of 6 × 1010 cm−2/eV were obtained from La2O3 nMISFET with equivalent oxide thickness (EOT) o...
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2006
ISSN: 1349-2543
DOI: 10.1587/elex.3.316